Conductivity sensor Conducell 4USF VP 30
temperatureprocess

Conductivity sensor - Conducell 4USF VP 30 - Hamilton Process Analytics - temperature / process
Conductivity sensor - Conducell 4USF VP 30 - Hamilton Process Analytics - temperature / process
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Characteristics

Evaluation type
temperature, conductivity
Applications
process
Pressure range

Max.: 20 bar
(290.08 psi)

Min.: 0 bar
(0 psi)

Description

Traditional Conducell 4UxF 4-pole conductivity sensors have a VP6 connector and are available with PG13.5, VariVent, or Bioconnect process connections. These FDA certified sensors are designed to withstand CIP, SIP, and autoclavation. They are compatible for easy use in hygienic applications with good linearity over a broad conductivity range. Electrodes are available in Stainless Steel (USF, 1.4435, & UHF, 2.4602), Platinum (UPtF), and Titanium (UTF). Stainless steel is the most common electrode material and is suitable for typical biopharmaceutical applications. Platinum can be used for long term stability and corrosion resistance. In cases of highly corrosive or chemically aggressive applications, Hastelloy can be chosen for its exceptional resistance. Titanium is well suited for use with corrosion such as seawater. These products must be paired with a conductivity transmitter such as the Hamilton H100. Specifications Parameter - Conductivity (4-Pole) Sensor Output - Traditional a-length - 30 mm Electrical Connector - VP6 Measurement Principle - 4 pole contacting Measuring Range - 1 µS/cm to 500 mS/cmAdditional specifications Cell Constant - 0.36 /cm Temperature Sensor - Pt1000 Diameter - 12 mm Process Connection - PG13,5 Wetted Parts - Stainless Steel 1.4435 PEEK (Polyetheretherketone) EPDM (Ethylene propylene elastomer) See compliance details in Material Specification document Surface Quality of Steel - Ra < 0.4 µm (N5, electropolished) Serial Number - Yes Certificate - Yes, with nominal and actual cell constant ATEX Approval - II 1/2 G Ex ia IIC T4/T5/T6 Ga/Gb; II 1/2 D ia IIIC T x °C Da/Db IECEx Approval - II 1/2 G Ex ia IIC T4/T5/T6 Ga/Gb; II 1/2 D ia IIIC T x °C Da/Db

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