FIB-SEM microscope NX2000

laboratoryfor researchinspection

FIB-SEM systems have become an indispensable tool for characterization and analysis of the latest technologies and high performance nano-scale materials. An ever-increasing demand for ultrathin TEM lamellas without artifacts during FIB processing require the best in ion and electron optics technologies. Hitachi's NX2000 high performance FIB and high resolution SEM system with its unique sample orientation control* and triple beam* technologies, supports high throughput, and high quality TEM sample preparation for cutting edge applications. * Option Features High contrast, real-time SEM end point detection allows ultrathin TEM sample preparation of sub 20 nm devices. Micro sampling* and high precision positioning mechanism* enable sample orientation control for Anti-Curtaining Effects (ACE function) and uniformly-thick lamellas. Triple Beam system* Triple beam configuration for Ga FIB-induced damage reduction. Specifications FIB column Acceleration voltage - 0.5 kV - 30 kV Beam current - 0.05 pA - 100 nA FE-SEM column Acceleration voltage - 0.5 kV - 30 kV Electron source - Cold cathode field emission source Detector Standard detector - Upper/Lower SED & BSED Stage - X: 0 - 205 mm Y: 0 - 205 mm Z: 0 - 10 mm R: 0 - 360° infinite T: -5 - 60° Special accessories (Optional) Ar/Xe ion 3rd column Micro-sampling System Multi-gas injection system Double tilt system Swing function ( for Ar/Xe ion 3rd column) TEM sample preparation wizard Automatic TEM sample preparation software CAD navigation software Linkage software with defect inspection instruments