Production system PlasmaPro 100 PECVD

The PlasmaPro 100 PECVD system is specifically designed to produce high quality films with excellent uniformity and control of film properties such as refractive index, stress, electrical characteristics and wet chemical etch rate. Our cutting-edge Plasma Enhanced CVD system is suitable for dielectric films passivation (e.g. SiO2, SixNy), silicon carbide, amorphous silicon, hard mask deposition and anti-reflective coatings. High quality films, high throughput, excellent uniformity High density plasma and low pressure deposition Excellent control of refractive index and stress Compatible with wafer sizes up to 200mm Rapid change between wafer sizes Low cost of ownership and ease of serviceability Resistive heated electrodes with capability up from 400°C to 1200°C In-situ chamber cleaning and end-pointing Overview PlasmaPro 100 PECVD delivers excellent conformal deposition and low particle generation due to electrode temperature uniformity and shower head design in the electrode, allowing RF energy to produce the plasma. The high energy reactive species of plasma offers high deposition rates to achieve the desired thickness of the substrate while maintaining low pressure. Its dual frequency 13.56MHz and 100KHz power applied to upper electrode enables stress control and film densification. Features Delivers reactive species to the substrate, with a uniform high conductance path through the chamber allows a high gas flow to be used while maintaining low pressure RF powered showerhead with optimised gas delivery provides uniform plasma processing with LF/RF switching allowing precise control of film stress High pumping capacity gives wide process pressure window