Production system PlasmaPro 100 ICPCVD

This ICPCVD process module is designed to produce high quality films at low growth temperatures, enabled through high-density remote plasmas that achieves superior film quality with low substrate damage. Excellent uniformity, high throughput and high precision processes High quality films Wide temperature range electrode Compatible with all wafer sizes up to 200mm Rapid change between wafer sizes Low cost of ownership and ease of serviceability Compact footprint, flexible layout Resistive heated electrodes with capability up to 400°C or 1200°C In-situ chamber cleaning and end-pointing Flexible vapour delivery module enabling deposition of films using liquid precursors e.g. TiO2 using TTIP, SiO2 using TEOS Applications Excellent quality low damage films at reduced temperatures. Typical materials deposited include SiO2, Si3N4 and SiON, Si and SiC at substrate temperatures as low as 5ºC ICP source sizes of 65mm, 180mm, 300mm delivering process uniformity up to 200mm wafers Electrodes available for temperature ranges from 5ºC to 400ºC Patented ICPCVD gas distribution technology In situ chamber cleaning with endpointing Flexible vapour delivery module enabling deposition of films using liquid precursors e.g. TiO2 using TTIP, SiO2 using TEOS Wall heating reduces chamber wall deposition Helium backside cooling with mechanical clamping ensures uniform wafer temperatures & optimised film properties Global Customer Support Oxford Instruments is committed to providing a comprehensive, flexible and reliable global customer support. We offer excellent quality service throughout the life of your system.