Production system PlasmaPro 100 Cobra

The PlasmaPro 100 Cobra ICP RIE system utilises a high-density inductively coupled plasma to achieve fast etch rates. The process modules offer excellent uniformity, high-throughput, high-precision and low-damage processes for wafer sizes up to 200mm, supporting a number of markets including, GaAs & InP laser optoelectronics, SiC & GaN power electronics/RF and MEMS & sensors. High etch rate and high selectivity Low damage etch and high repeatability processing Single wafer load lock or clusterable with up to 5 process modules He backside cooling for optimum temperature control Wide temperature range electrode, -150°C to 400°C Compatible with all wafer sizes up to 200mm Rapid change between wafer sizes In-situ chamber cleaning and end-pointing Overview The Cobra® ICP plasma source produces high-density reactive species at low pressure. Substrate DC bias is driven by a separate RF generator, allowing independent control of radicals and ions, according to process requirements. Oxford Instruments’ PlasmaPro 100 process modules offer a 200mm platform with single wafer and multi-wafer batch capability. The process modules offer high throughput, high precision and excellent uniformity with clean smooth vertical profiles and etch surfaces. Our systems have a wide install base within high volume manufacturing (HVM), with well-developed process solutions. Features Delivers reactive species to the substrate, with a uniform high conductance path through the chamber - Allows a high gas flow to be used while maintaining low chamber pressure, which provides wide process windows for advanced application development