Magnetic production system PlasmaPro 100 Polaris

The PlasmaPro 100 Polaris single wafer ICP RIE etch system offers smart solutions to produce the superb etch results you need to maintain your competitive edge. With extensive experience in etching materials such as GaN, SiC and Sapphire, our technologies enable the cost of ownership and yield required to maximise the performance of your devices. Superb etch rates Low cost of ownership Designed specifically for harsh chemistries Excellent etch uniformity Exclusive electrostatic clamp technology capable of clamping sapphire, GaN on sapphire and silicon High conductance pumping system Clusterable with other PlasmaPro systems Features The PlasmaPro 100 Polaris single wafer etch system offers smart solutions to produce the etch results you need to maintain your competitive edge. Designed specifically for the harsh chemistries required for etching tough materials such as GaN, Sapphire and SiC, the PlasmaPro 100 Polaris delivers fast etch rates uniformly on wafers up to 200mm diameter. Actively cooled electrode - Maintains sample temperature during etch process High power ICP source - Produces high density plasmas Reliable hardware and ease of serviceability - Excellent uptime Magnetic spacer - Enhanced ion control and uniformity Exclusive electrostatic clamp technology - Capable of clamping sapphire, GaN on sapphire and silicon Heated chamber liners - Optimised to reduce chamber wall deposition Advanced auto matching unit (AMU) - Allows fast, efficient and accurate matching, enabling excellent process repeatability Applications RF device SiC Via hole etch Power Semiconductor Device SiC feature etch HBLED GaN etch RF device GaN etch