Production system PlasmaPro 100

The PlasmaPro 100 RIE modules deliver isotropic and anisotropic dry etching for an extensive range of processes. It is suitable for research and production customers, providing a controlled environment that improves process repeatability with load-lock and cassette-to-cassette options. Compatible with all wafer sizes up to 200mm Single-wafer or batch processing with excellent process control High control of the gases and plasma power Rapid change between wafer sizes Low cost of ownership and ease of serviceability Excellent uniformity, high throughput and high precision processes In-situ chamber cleaning and end-pointing Wide temperature range electrode, -150°C to 400°C Overview Reactive Ion Etch (RIE) is a predominantly physical etch process. A rich plasma is created just above the wafer and the ions are accelerated toward the surface to produce a powerful and highly anisotropic etch. Gas enters the top of the chamber where it is converted into a reactive plasma at low pressure by a wafer-level RF source. The ions either interact with the sample to form etch by-products, or remain as unreacted species. All the unreacted species and by-products are removed from the chamber by the vacuum pump to maintain a rich and active plasma to maintain high etch rates. The PlasmaPro 100 RIE delivers reactive species to the substrate, with a uniform high conductance path through the chamber, allowing a high gas flow to be used while maintaining low pressure. - Features Wide temperature range electrode (-150°C to +400°C) which can be cooled by liquid nitrogen, a fluid re-circulating chiller or resistively heated.